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NTE2639 Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, High Speed Switch
Description: The NTE2639 is a high voltage, high speed switching silicon NPN transistor in a plastgic full-pack envelope designed for use in horizontal deflection circuits of color TV receivers. Absolute Maximum Ratings: Collector-Emitter Voltage Peak Value (VBE = 0V), VCESM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Collector-Emitter Voltage (OpenBase), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825V Collector Current, IC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak Value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak Value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Reverse Base Current (Average over any 20ms period), -IB(AV) . . . . . . . . . . . . . . . . . . . . . . . 200mA Reverse Base Current Peak Value (Note 1), -IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A Total Power Dissipation (THS +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Electrostatic Discharge Capacitor Voltage (Human body model (250pF, 1.5k), VC . . . . . . . . 10kV Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Maximum Thermal Resistance, Junction-to-Heatsink, RthJHS Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8K/W Typical Thermal Resistance, Junction-to-Ambient (In Free Air), RthJA . . . . . . . . . . . . . . . . . . 35K/W Note 1. Turn-off current.
Electrical Characteristics: (THS = +25C unless otherwise specified)
Parameter Symbol Test Conditions R.H. 65%; Clean and Dustfree f = 1MHz Min Typ Max Unit Isolation Limiting Value and Characteristic Repetitive Peak Voltage from All Three Terminals to External Heatsink Capacitance from T2 to External Heatsink Static Characteristics Collector Cutoff Current ICES IEBO V(BR)EBO VCE(sat) VBE(sat) hFE VCE = 1700V, VBE = 0 VCE = 1700V, VBE = 0, TJ = +125C Emitter Cutoff Current Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain VEB = 7.5V, IC = 0A IB = 1mA IC = 7A, IB = 1.75A IC = 7A, IB = 1.75A VCE = 5V, IC = 0.1A VCE = 1V, IC = 7A Dynamic Characteristics (Switching Times, 16kHz Line Deflection Circuit) Turn-Off Storage Time Turn-Off Fall Time ts tf IC(sat) = 7A, LC = 650H, Cfb = 18nF, VCC = 162V, IB(end) = 1.5A, LB = 2H, -VBB = 4V - - 5.8 0.6 6.5 0.8 s s - - - 7.5 825 - - - 4.0 - - - 13.5 - - - 22 6.0 1.0 2.0 1.0 - - 1.0 1.1 - 6.5 mA mA mA V V V V Visol Cisol - - - 22 2500 - V pF
VCEO(sus) IB = 0A, IC = 100mA, L = 25mH
Note 2. Measured with half sine-wave voltage (curve tracer).
.228 (5.8) Max .630 (16.0) Max .177 (4.5) .118 (3.0)
Isol
.885 (22.5) Max B C E
1.063 (27.0) Max
.712 (18.1) Min
.215 (5.45)
.215 (5.45)

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